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MJ21196G Datasheet PDF

Thinki Semiconductor MJ21196G

The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Part No. MJ21196G
Datasheet MJ21196G Download
Manufacturer
Thinki Semiconductor
Description 250 Watt Silicon Type Metal Package Power Transistor
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MJ21196G datasheet page 1 preview

MAXIMUM RATINGS

Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1.5 V Collector Current — Continuous Collector Current — Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS

(TC = 25°C ± 5°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%. VCEO(sus) ICEO Min 250 — Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 250 1.43 –āā65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C Symbol RθJC Max 0.7 Unit °C/W Typical — — Max Unit — Vdc 100 µAdc (continued) Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/5 MJ21195G/MJ21196G ® ELECTRICAL CHARACT...
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