onsemi MJ21196G
The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.| Part No. | MJ21196G |
|---|---|
| Datasheet | MJ21196G Download |
| Manufacturer |  onsemi |
| Description | Silicon Power Transistors |
| Buy | Stock & Price |
FEATURES
● Total Harmonic Distortion Characterized● High DC Current Gain
● Excellent Gain Linearity
● High SOA
● These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Symbol VCEO VCBO VEBO VCEX IC ICM IB PD Value 250 400 5 400 16 30 5 250 1.43 Unit Vdc Vdc Vdc Vdc Adc Adc Adc W W/_C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 _C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. THERMAL CHARACTERISTICS Characteristic...
