THG50T65FQK Description
Silicon Field Stop(FS) Trench IGBT The THG50T65FQK is use advanced field stop(FS) technology. The 650V FS IGBT offers superior conduction and switching performances.
THG50T65FQK Key Features
- 650V Breakdown Voltage
- Low saturation voltage:VCE(sat),typ=1.90V
- FS Tench Technology, Positive temperature coefficient
- Solar Converters
- Welding Converters
- 250 nA
- Pulse Test: Pulse Width <= 300µs, Duty Cycle< =2%