THG50T65FQK Datasheet | Thunder

Thunder High Power Products Description Silicon Field Stop(FS) Trench IGBT The THG50T65FQK is use advanced field stop(FS) technology. The 650V FS IGBT offers superior conduction and switching performances. General Features - 650V Breakdown Voltage - Low saturation voltage:VCE(sat),typ=1.90V @IC=50A and TC=25℃ - FS Tench Technology, Positive temperature coefficient Application - Solar Converters - Welding Converters - UPS THUNDER TO-247 Electrical Characteristics @ Tc=25℃(unless otherwise specified) a) Limited Parameters: Symbol VCES VGES ICM IF IFM Tj TL TSC Parameter Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current @Tc=100℃ Pulsed Collector Current Diode Continuous Forward Current @Tc=100℃ Diode Maximum Forward Current Total Dissipation at @Tc=100℃ Total Dissipation at @Ta=25℃ Operating Junction and Storage Temperature Range Max Temperature For Soldering Short circuit data VGE=15V, VCC ≤ 360V, Tvj=150°C Value 650 +/-20 100 50 150 50 100 300 600 -55 to +175 260 5 Rev.A01 Units V V A A A A A ℃ ℃ us 1/7 THG50T65FQK b) Electrical Parameters: Symbol Parameter VCES Collector-Emitter Voltage VCE(sat) VGE(th) Collector-Emitter Saturation Voltage Gated Threshold...