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XP151A11B0MR-G Datasheet Power MOSFET

Manufacturer: Torex Semiconductor

Overview: XP151A11B0MR-G Power MOSFET ETR1117_003 ■GENERAL.

General Description

The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

Key Features

  • Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V : Rds(on) = 0.17Ω@ Vgs = 4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free.
  • PIN.

XP151A11B0MR-G Distributor