XP231N02017R-G
XP231N02017R-G is N-channel MOSFET manufactured by Torex Semiconductor.
FEATURES
On-State Resistance
: RDS(on)＝5Ω@VGS =4.5V
Driving voltage
: 2.5V
Environmentally Friendly : EU Ro HS pliant, Pb Free
- APPLICATIONS
- Switching
- EQUIVALENT CIRCUIT 3
- PIN CONFIGURATION
- SOT-723
Drain
Gate
Source
- PRODUCT NAME
PRODUCT NAME
PACKAGE
ORDER UNIT
- SOT-723
8,000pcs/ Reel
- The “-G” suffix denotes Halogen and Antimony free as well as being fully EU Ro HS pliant
- ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) (- 1) Channel Power Dissipation (- 2) Junction Temperature Storage Temperature (- 1) PW≦10μs,duty cycle≦1% (- 2) When implemented on a PCB defined by JESD51-7
VDSS VGSS
ID IDP Pd TJ Tstg
RATINGS
30 ±20 0.2 0.4 0.35 150 -55~150
Ta=25℃ UNIT
V V A A W ℃
℃
1/6
- ELECTRICAL CHARACTERISTICS
PARAMETER...
