XP231P02013R-G
XP231P02013R-G is N-channel MOSFET manufactured by Torex Semiconductor.
FEATURES
On-State Resistance Driving voltage
: RDS(on)＝5Ω@VGS =-4.5V : -2.5V
Environmentally Friendly : EU Ro HS pliant, Pb Free
- APPLICATIONS
- Switching
ETR11051-001
- EQUIVALENT CIRCUIT 3
- PIN CONFIGURATION
- SOT-323-3A
Drain
Gate
Source
- PRODUCT NAME
PRODUCT NAME
PACKAGE
ORDER UNIT
- SOT-323-3A
3,000 pcs/ Reel
- The “-G” suffix denotes Halogen and Antimony free as well as beingfully EU Ro HS pliant
- ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (DC)
Drain Current (Pulse) (- 1)
Channel Power Dissipation (- 2)
Pd
Junction...
