APPLICATIONS
Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems GENERAL DESCRIPTION
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. FEATURES
Low on-state resistance : Rds (on) = 0.17 Ω ( Vgs = -4.5V ) Rds (on) = 0.3 Ω ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V Gate protect diode built-in High density mounting : SOT - 89 u Pin Configuration Pin Assignment PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source 1 G 2 D 3 S SOT - 89 Top View Equivalent Circuit ABSOLUTE MAXIMUM RATINGS
Ta=25 C O PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 + 12 -2.5 -10 -2.5 2 150 -55 to 150 UNITS V V A A A W C C 1 2 P - Channel MOS FET ( 1 device built-in ) 3 C...
TOREX SEMICONDUCTOR
