1SS306
1SS306 is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
- Small package
: SC-61
- Low forward voltage
: VF (2) = 0.90 V (typ.)
- Fast reverse recovery time : trr = 30 ns (typ.)
- Small total capacitance : CT = 1.5 p F (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
- m A
Average forward current
- m A
Surge current (10ms)
IFSM
2-
Power dissipation
PD (Note 1, 3)
200 m W
PD (Note 2)
Junction temperature
Tj (Note 1)
°C
Tj (Note 2)
Storage...
