• Part: 1SS308
  • Description: Silicon Epitaxial Planar Type Diode
  • Category: Diode
  • Manufacturer: Toshiba
  • Size: 404.05 KB
Download 1SS308 Datasheet PDF
Toshiba
1SS308
1SS308 is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications Unit: mm - Small package : SC-74A - Low forward voltage : VF (3) = 0.92 V (typ.) - Fast reverse recovery time : trr = 1.6 ns (typ.) - Small total capacitance : CT = 2.2 p F (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current 300 (- ) m A Average forward current 100 (- ) m A Surge current (10ms) IFSM 2 (- ) Power dissipation PD (Note 1, 3) 300 m W PD (Note 2) Junction temperature Tj (Note 1) °C Tj (Note 2) Storage...