Datasheet4U Logo Datasheet4U.com

1SS309 - Silicon Epitaxial Planar Type Diode

📥 Download Datasheet

Datasheet preview – 1SS309

Datasheet Details

Part number 1SS309
Manufacturer Toshiba Semiconductor
File Size 358.23 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet 1SS309 Datasheet
Additional preview pages of the 1SS309 datasheet.

📁 Similar Datasheet

  • 1SS300 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)
  • 1SS301 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
  • 1SS301 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)
  • 1SS302 - ULTRA HIGH SPEED SWITCHING APPLICATIONS (Guangdong Kexin Industrial)
  • 1SS302A - Silicon Epitaxial Planar Switching Diodes (Toshiba)
  • 1SS307E - Diode (Toshiba)
  • 1SS313 - VHF TUNER BAND SWITCH APPLICATIONS DIODES (Kexin)
  • 1SS314 - SILICON EPITAXIAL PLANAR DIODE (SEMTECH)
  • 1SS321 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE (SEMTECH ELECTRONICS)
  • 1SS321 - LOW VOLTAGE HIGH SPEED SWITCHING (Guangdong Kexin Industrial)
Other Datasheets by Toshiba Semiconductor
  • 1SS300 - Silicon Epitaxial Planar Type Diode
  • 1SS301 - Silicon Epitaxial Planar Type Diode
  • 1SS302 - Diode
  • 1SS306 - Silicon Epitaxial Planar Type Diode
  • 1SS307 - Diode
  • 1SS308 - Silicon Epitaxial Planar Type Diode
  • 1SS311 - Diode
  • 1SS312 - Silicon Epitaxial Planar Type Diode

Full PDF Text Transcription

Click to expand full text
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 1SS309 Ultra High Speed Switching Applications Unit: mm  Small package : SC-74A  Low forward voltage : VF (3) = 0.90V (typ.)  Fast reverse recovery time : trr = 1.6ns (typ.)  Small total capacitance : CT = 0.9pF (typ.
Published: |