| Part number | 1SS314 |
|---|---|
| Datasheet | 1SS314_ToshibaSemiconductor.pdf |
| File Size | 147.61 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 1SS314 VHF Tuner Band Switch Applications Small package. CT = 1.2 pF (max) Low series resistance: rs = 0.5 Ω (typ.) Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 30 V IF 100 mA Tj 125 °C Tstg −55~125 °C Note:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS314 | SILICON EPITAXIAL PLANAR DIODE | SEMTECH |
| Part Number | Description |
|---|---|
| 1SS311 | Diode |
| 1SS312 | Silicon Epitaxial Planar Type Diode |
| 1SS313 | Silicon Epitaxial Planar Type Diode |
| 1SS315 | Silicon Epitaxial Planar Type Diode |
| 1SS319 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |
| 1SS302 | Silicon Epitaxial Planar Type Diode |
| 1SS306 | Silicon Epitaxial Planar Type Diode |
| 1SS307 | Silicon Epitaxial Planar Type Diode |
