1SS337
1SS337 is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High-Speed Switching Applications
Unit: mm z Small package: SC-59 z Low forward voltage: VF (3) = 0.88 V (typ.) z Fast reverse recovery time: trr = 6 ns (typ.) z Small total capacitance: CT = 1.6 p F (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
- m A
Average forward current
- m A
Surge current (10 ms) Power dissipation
IFSM P
6-
150 m W
Junction temperature Storage temperature
Tj
°C
JEDEC
Tstg
- 55 to 150
°C
JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3G1F temperature/current/voltage and the significant change in
Weight: 0.012 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
- : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta =...
