1SS337 - Silicon Epitaxial Planar Type Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS337
Manufacturer	Toshiba Semiconductor
File Size	284.91 KB
Description	Silicon Epitaxial Planar Type Diode
Datasheet	1SS337 Datasheet
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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS337 Ultra High-Speed Switching Applications 1SS337 Unit: mm z Small package: SC-59 z Low forward voltage: VF (3) = 0.88 V (typ.) z Fast reverse recovery time: trr = 6 ns (typ.) z Small total capacitance: CT = 1.6 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 600 * mA Average forward current IO 200 * mA Surge current (10 ms) Power dissipation IFSM P 6* A 150 mW Junction temperature Storage temperature Tj 150 °C JEDEC Tstg −55 to 150 °C JEITA TO-236MOD SC-59 Note: Using continuously under heavy loads (e.g.

Published: Mar 23, 2005 |