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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS348
Low Voltage High Speed Switching
1SS348
Unit: mm
z Low forward voltage z Low reverse current z Small package
: VF (3) = 0.56V (typ.) : IR = 5μA (max) : SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
300 mA
Average forward current Power dissipation
IO 100 mA P 200 mW
Junction temperature Storage temperature
Tj 125 °C
Tstg
−55~125
°C
Operating Temperature
Topr
−40~100
°C JEDEC
TD-236MOD
Note: Using continuously under heavy loads (e.g. the application of high JEITA
SC-59
temperature/current/voltage and the significant change in
TOSHIBA
1-3G1B
temperature, etc.
1SS348 Datasheet
