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TOSHIBA Diode Silicon Epitaxial Schottky Planar Type
1SS349
Ultra High Speed Switching Application
z Low forward voltage z Low reverse current z Small package
: VF (3) = 0.49V (typ.) : IR = 50μA (max) : SC−59
1SS349
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
25 V
Reverse voltage
VR 20 V
Maximum (peak) forward current
IFM
3000
mA
Average forward current Power dissipation
IO
1000
mA
P 200 mW
Junction temperature
Tj 125 °C
Storage temperature Operating Temperature
Tstg
−55∼125
°C JEDEC
Topr
−40∼100
°C JEITA
TD−236MOD SC−59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1−3G1B
temperature/current/voltage and the significant change in temperature, etc.
1SS349 Datasheet
