• Part: 1SS372
  • Description: Silicon Epitaxial Schottky Barrie Diode
  • Manufacturer: Toshiba
  • Size: 211.22 KB
Download 1SS372 Datasheet PDF
Toshiba
1SS372
1SS372 is Silicon Epitaxial Schottky Barrie Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.) @IF =...