1SS377
1SS377 is Silicon Epitaxial Schottky Barrie Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching
Unit: mm z Low forward voltage z Small package
: VF = 0.23V (typ.) @IF = 5m A : SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
- m A
Average forward current
- m A
Surge current (10ms) Power dissipation
IFSM P
1- A 150 m W
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
- 55 to 125
°C
Operating temperature range
Topr
- 40 to 100
°C
JEDEC JEITA
TO-236MOD SC-59
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-3G1F
Weight: 0.012g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability...
