| Part number | 1SV276 |
|---|---|
| Datasheet | 1SV276_ToshibaSemiconductor.pdf |
| File Size | 114.69 KB |
| Manufacturer | Toshiba |
| Description | Variable Capacitance Diode |
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C 1SV276 Unit:.
| Part Number | Description |
|---|---|
| 1SV270 | Variable Capacitance Diode |
| 1SV271 | Silicon Diode |
| 1SV277 | Variable Capacitance Diode |
| 1SV278 | VARIABLE CAPACITANCD DIODE |
| 1SV279 | Variable Capacitance Diode |
| 1SV214 | BARIABLE CAPACITANCE DIODE |
| 1SV215 | Variable Capacitance Diode |
| 1SV216 | Variable Capacitance Diode |
| 1SV217 | Variable Capacitance Diode |
| 1SV225 | Variable Capacitance Diode |
