1SV276
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
VCO for UHF Band Radio
- High capacitance ratio: C1 V/C4 V = 2.0 (typ.)
- Low series resistance: rs = 0.22 Ω (typ.)
- Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Junction temperature Storage temperature range
Symbol
VR Tj Tstg
Rating
10 125 -55~125
Unit
V °C °C
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance
Symbol
Test Condition
VR IR C1 V C4 V C1 V/C4 V rs
IR = 1 m A VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz
¾ VR = 1 V, f = 470 MHz
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
10 ¾ ¾
¾¾
15 16 17
7.0 8.0 8.5
1.8 2.0 ¾
¾ 0.22 0.4
V n A p F p F ¾...
