| Part number | 1SV277 |
|---|---|
| Datasheet | 1SV277_ToshibaSemiconductor.pdf |
| File Size | 147.05 KB |
| Manufacturer | Toshiba |
| Description | Variable Capacitance Diode |
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 1SV277 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.3 (typ.) Low series resistance: rs = 0.42 Ω (typ.) Small package Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note:.
| Part Number | Description |
|---|---|
| 1SV270 | Variable Capacitance Diode |
| 1SV271 | Silicon Diode |
| 1SV276 | Variable Capacitance Diode |
| 1SV278 | VARIABLE CAPACITANCD DIODE |
| 1SV279 | Variable Capacitance Diode |
| 1SV214 | BARIABLE CAPACITANCE DIODE |
| 1SV215 | Variable Capacitance Diode |
| 1SV216 | Variable Capacitance Diode |
| 1SV217 | Variable Capacitance Diode |
| 1SV225 | Variable Capacitance Diode |
