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1SV302 - Variable Capacitance Diode

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Part number 1SV302
Manufacturer Toshiba Semiconductor
File Size 86.82 KB
Description Variable Capacitance Diode
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV302 CATV Tuning · High capacitance ratio: C2 V/C25 V = 17.5 (typ.) · Low series resistance: rs = 1.05 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV302 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C2 V C25 V C2 V/C25 V rs IR = 1 mA VR = 28 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz ¾ VR = 5 V, f = 470 MHz Note: Available in matched group for capacitance to 2.5%.
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