| Part number | 1SV305 |
|---|---|
| Datasheet | 1SV305_ToshibaSemiconductor.pdf |
| File Size | 129.95 KB |
| Manufacturer | Toshiba |
| Description | VARIABLE CAPACITANCD DIODE |
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV305 1SV305 VCO for VHF Band Radio Small package High capacitance ratio: C1 V/C4 V = 3.0 (typ.) Low series resistance: rs = 0.27 Ω (typ.) Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note:.
| Part Number | Description |
|---|---|
| 1SV302 | Variable Capacitance Diode |
| 1SV303 | Variable Capacitance Diode |
| 1SV304 | Variable Capacitance Diode |
| 1SV306 | VARIABLE CPACITANCE DIODE |
| 1SV307 | Silicon Epitaxial Pin Type diode |
| 1SV308 | Silicon Epitaxial Pin Type Diode |
| 1SV309 | Diode |
| 1SV310 | Diode |
| 1SV311 | Diode |
| 1SV312 | Diode |
