| Part number | 1SV304 |
|---|---|
| Datasheet | 1SV304_ToshibaSemiconductor.pdf |
| File Size | 131.64 KB |
| Manufacturer | Toshiba |
| Description | Variable Capacitance Diode |
|
|
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 1SV304 VCO for VHF Band Radio Small package High capacitance ratio: C1 V/C4 V = 3.0 (typ.) Low series resistance: rs = 0.27 Ω (typ.) Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note:.
| Part Number | Description |
|---|---|
| 1SV302 | Variable Capacitance Diode |
| 1SV303 | Variable Capacitance Diode |
| 1SV305 | VARIABLE CAPACITANCD DIODE |
| 1SV306 | VARIABLE CPACITANCE DIODE |
| 1SV307 | Silicon Epitaxial Pin Type diode |
| 1SV308 | Silicon Epitaxial Pin Type Diode |
| 1SV309 | Diode |
| 1SV310 | Diode |
| 1SV311 | Diode |
| 1SV312 | Diode |
