1SV304
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
VCO for VHF Band Radio
- Small package
- High capacitance ratio: C1 V/C4 V = 3.0 (typ.)
- Low series resistance: rs = 0.27 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage Junction temperature Storage temperature range
VR 10 V
Tj 125 °C
Tstg
- 55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate,...
