1SV313 Overview
TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO l High Capacitance Ratio : C0.5V/C2.5V = 2.5 (Typ.) l Low Series Resistance : Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
1SV313 Key Features
- High Capacitance Ratio : C0.5V/C2.5V = 2.5 (Typ.)
- Low Series Resistance : rs = 0.35Ω (Typ.)
- Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature