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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1225
Power Amplifier Applications Driver Stage Amplifier Applications
2SA1225
Unit: mm
• High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−160
V
Collector-emitter voltage
VCEO
−160
V
Emitter-base voltage
VEBO −5 V
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
IC IB
PC
−1.5 −0.3 1.0 15
A A
W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in temperature, etc.
2SA1225 Datasheet
