Datasheet4U Logo Datasheet4U.com

2SA1225 Datasheet Silicon PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SA1225.

General Description

·High transition frequency ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC2983 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A PC Total Power Dissipation @ TC=25℃ 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1225 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE=-1mA,IC=0 V (BR)CEONOTE Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=-1mA ,IE=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;

IB= -50mA VBE(on) Base-Emitter Voltage VCE=-5V, IC=-0.5A ICBO Collector Cutoff Current VCB= -160V;

IE= 0 IEBO Emitter Cutoff Current VEB= -5V;

2SA1225 Distributor & Price

Compare 2SA1225 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Toshiba Semiconductor Logo 2SA1225 Silicon PNP Transistor Toshiba Semiconductor
JCST Logo 2SA1225 PNP Transistor JCST

More Datasheets from Inchange Semiconductor

Part Number Description
2SA1227 POWER TRANSISTOR
2SA1227A POWER TRANSISTOR
2SA1205 POWER TRANSISTOR
2SA1209 POWER TRANSISTOR
2SA1214 Silicon PNP Power Transistor
2SA1215 POWER TRANSISTOR
2SA1217 POWER TRANSISTOR
2SA1232 POWER TRANSISTOR
2SA1242 Silicon PNP Power Transistor
2SA1249 POWER TRANSISTOR