Datasheet Details
| Part number | 2SA1227A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.60 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1227A_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1227A.
| Part number | 2SA1227A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.60 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1227A_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2987A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1227A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;
Compare 2SA1227A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1227A | SILICON POWER TRANSISTOR | SavantIC |
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2SA1227 | SILICON POWER TRANSISTOR | SavantIC |
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