2SA1227 Overview
Key Specifications
Description
With TO-3PFa package - Complement to type 2SC2987/2987A - High power dissipation APPLICATIONS - For use in audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION SYMBOL PARAMETER 2SA1227 VCBO Collector-base voltage 2SA1227A 2SA1227 VCEO Collector-emitter voltage 2SA1227A VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -160 -5 -12 -20 120 150 -55~150 V A A W Open emitter -160 -140 V CONDITIONS VALUE -140 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-140V; IE=0 VEB=-3V; IC=0 IC=-2A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V 2SA1227 2SA1227A SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT MIN TYP. 0.8 -1.5 MAX -1.5 -2.0 -50 -50 UNIT V V µA µA 60 40 280 60 320 pF MHz hFE-1 classifications R 60-120 Q 100-200 P 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1227 2SA1227A Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3.
