2SA1227 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·plement to Type 2SC2987 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1227 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)...