2SA1431 - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SA1431
Manufacturer	Toshiba
File Size	123.29 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1431 Datasheet

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2SA1430	Silicon PNP Epitaxial Type Transistor
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications 2SA1431 Unit: mm • High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −35 −20 −8 −5 −8 −0.