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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1432
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
2SA1432
Unit: mm
• High voltage: VCBO = −300 V, VCEO = −300 V • Low saturation voltage: VCE (sat) = −0.5 V (max) • Small collector output capacitance: Cob = 6 pF (typ.) • Complementary to 2SC3672
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−300 −300
−8 −100 −20 1000 150 −55 to 150
V V V mA mA mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.
2SA1432 Datasheet
