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2SA1437 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Very small-sized package permitting sets to be made smaller and slimer.
  • Adoption of FBET process.
  • High DC current gain : (hFE=400 to 1000).
  • High breakdown voltage : (VCEO≥100V).
  • Low collector-to-emitter saturation voltage : (VCE(sat)≤0.5V).
  • High VEBO : (VEBO≥15V).
  • Small Cob : (Cob=4.0pF typ). Package Dimensions unit:mm 2003A [2SA1437] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitte.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications · AF amplifier, various drivers, muting circuit. Features · Very small-sized package permitting sets to be made smaller and slimer. · Adoption of FBET process. · High DC current gain : (hFE=400 to 1000). · High breakdown voltage : (VCEO≥100V). · Low collector-to-emitter saturation voltage : (VCE(sat)≤0.5V). · High VEBO : (VEBO≥15V). · Small Cob : (Cob=4.0pF typ).