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2SA1435 - PNP Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of MBIT process.
  • High DC current gain (hFE=500 to 1200).
  • Large current capacity.
  • Low colletor-to-emitter saturation voltage (VCE(sat)≤0.5V max).
  • High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1435] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperatur.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuits. Features · Adoption of MBIT process. · High DC current gain (hFE=500 to 1200). · Large current capacity. · Low colletor-to-emitter saturation voltage (VCE(sat)≤0.5V max). · High VEBO (VEBO≥15V).