Datasheet Summary
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- -
- -
Low collector-emitter saturation voltage: VCE (sat) =
- 0.5 V (max) (IC =
- 1 A) High collector power dissipation: PC = 900 mW (Ta = 25 °C) High-speed switching: tstg = 300 ns (typ.) plementary to...