• Part: 2SA1735
  • Description: Silicon PNP Epitaxial Type Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 173.16 KB
Download 2SA1735 Datasheet PDF
Toshiba
2SA1735
2SA1735 is Silicon PNP Epitaxial Type Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications Unit: mm - Low saturation voltage: VCE (sat) = - 0.5 V (max) (IC = - 500 m A) - High speed switching time: tstg = 0.25 μs (typ.) - Small flat package - PC = 1.0 to 2.0 W (mounted on a ceramic substrate) - plementary to 2SC4540 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg - 60 - 50 - 6 - 1 - 0.2 500 - 55 to 150 V V V A A m W °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note...