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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1736
Power Amplifier Applications Power Switching Applications
2SA1736
Unit: mm
• Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4541
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO
−60
V
VCEO
−50
V
VEBO
−6
V
IC
−3
A
IB
−0.
2SA1736 Datasheet
