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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1923
High Voltage Switching Applications
2SA1923
Unit: mm
• High voltage: VCEO = −400 V • Low saturation voltage: VCE (sat) = −1 V (max)
(IC = −100 mA, IB = −10 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
−400 −400
−7 −0.5 −1 −0.25
1 10 150 −55 to 150
Unit V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.
2SA1923 Datasheet
