• Part: 2SA950
  • Description: TRANSISTOR
  • Manufacturer: Toshiba
  • Size: 78.84 KB
Download 2SA950 Datasheet PDF
2SA950 page 2
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Datasheet Summary

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Power Amplifier Applications Unit: mm - High hFE: hFE = 100~320 - 1 W output applications - plementary to 2SC2120 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -800 -160 600 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector...