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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA950
2SA950
Audio Power Amplifier Applications
Unit: mm
· High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
-35 -30 -5 -800 -160 600 150 -55~150
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.
2SA950 Datasheet
