• Part: 2SC1959
  • Description: PNP Transistor
  • Manufacturer: Toshiba
  • Size: 81.35 KB
Download 2SC1959 Datasheet PDF
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Datasheet Summary

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm - Excellent hFE linearity: hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA - 1 watt amplifier applications. - plementary to 2SA562TM. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 500 100 500 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta =...