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2SC2669
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 4 50 10 200 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.
2SC2669 Datasheet
