Datasheet Details
| Part number | 2SC2669 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 291.14 KB |
| Description | TRANSISTOR |
| Datasheet | 2SC2669_ToshibaSemiconductor.pdf |
|
|
Overview: 2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm · High power gain: Gpe = 30dB (typ.) (f = 10.
| Part number | 2SC2669 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 291.14 KB |
| Description | TRANSISTOR |
| Datasheet | 2SC2669_ToshibaSemiconductor.pdf |
|
|
|
| Part Number | Description |
|---|---|
| 2SC2668 | Silicon NPN Transistor |
| 2SC2638 | TRANSISTOR |
| 2SC2639 | TRANSISTOR |
| 2SC2640 | TRANSISTOR |
| 2SC2641 | TRANSISTOR |
| 2SC2642 | TRANSISTOR |
| 2SC2643 | TRANSISTOR |
| 2SC2644 | Silicon NPN Epitaxial Planar Type Transistor |
| 2SC2655 | Silicon NPN TRANSISTOR |
| 2SC2670 | TRANSISTOR |