2SC2669 datasheet by Toshiba.
| Part number | 2SC2669 |
|---|---|
| Datasheet | 2SC2669_ToshibaSemiconductor.pdf |
| File Size | 291.14 KB |
| Manufacturer | Toshiba |
| Description | TRANSISTOR |
|
|
2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: Gpe = 30dB (typ.) (f = 10.7 MHz) · Remended for FM IF, OSC stage and AM CONV, IF stage. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
| Part Number | Description |
|---|---|
| 2SC2668 | Silicon NPN Transistor |
| 2SC2638 | TRANSISTOR |
| 2SC2639 | TRANSISTOR |
| 2SC2640 | TRANSISTOR |
| 2SC2641 | TRANSISTOR |
| 2SC2642 | TRANSISTOR |
| 2SC2643 | TRANSISTOR |
| 2SC2644 | Silicon NPN Epitaxial Planar Type Transistor |
| 2SC2655 | Silicon NPN TRANSISTOR |
| 2SC2670 | TRANSISTOR |
