2SC2668
2SC2668 is Silicon NPN Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
High Frequency Amplifier Applications FM, RF, IF Amplifier Applications
Unit: mm
- Small reverse transfer capacitance: Cre = 0.70 p F (typ.)
- Low noise figure: NF = 2.5d B (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature range Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
40 30 4 20 4 100 125 -55~125
Unit
V V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain
ICBO IEBO
VCB = 40 V, IE = 0 VEB = 4 V, IC = 0 h FE (Note)
VCE = 6 V, IC = 1 m A
Cre VCE = 6 V, f = 1 MHz f T VCE = 6 V, IC = 1 m A
Cc･rbb’ VCE = 6 V, IE = -1 m A, f = 30 MHz
NF VCC = 6 V, IE = -1 m A, f = 100 MHz, Gpe (Figure 1)
Note: h FE classification R: 40~80 O: 70~140 Y: 100~200
Min Typ. Max Unit
¾ ¾ 0.5 m A ¾ ¾ 0.5 m A
40 ¾ 200
¾ 0.70 ¾ p...
