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2SC2668
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2668
High Frequency Amplifier Applications FM, RF, IF Amplifier Applications
Unit: mm
· Small reverse transfer capacitance: Cre = 0.70 pF (typ.) · Low noise figure: NF = 2.5dB (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature range Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
40 30 4 20 4 100 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.
2SC2668 Datasheet
