2SC2668 Datasheet | GD electronics

Features — Small reverse transfer capacitance — Low Noise Figure TO-92S MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 4 20 200 150 -55-150 Units V V V m A m W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Reverse Transfer Capacitance Collector-Base Time Constant Transition frequency Power Gain Noise figure Symbol Test conditions V(BR)CBO IC =100μA, IE=0 V(BR)CEO V(BR)EBO IC =1m A, IB=0 IE=100μA, IC=0 ICBO VCB=40V, IE=0 IEBO VEB=4V, IC=0 h FE VCE=6V, IC=1m A Cre VCE=6V, f=1MHz Cc- rbb’ VCE=6V, IE=-1m A, f=30MHz f T VCE=6V, IC=1m A Gpe VCC=6V, IC =1m A, f=100MHz NF VCC=6V, IC =1m A, f=100MHz MIN TYP MAX UNIT 40 V 30 V 4V 0.5 μA 0.5 μA 40 200 0.7 p F 30 ps 550 MHz 18 d B 5 d B CLASSIFICATION OF h FE Rank Range R 40-80 O 70-140 Y 100-200 Typical Characteristics TO-92S Transistor...