GD electronics 2SC2668
NPN Transistor
FEATURES
Small reverse transfer capacitance Low Noise Figure TO-92SMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 4 20 200 150 -55-150 Units V V V mA mW ℃ ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Reverse Transfer Capacitance Collector-Base Time Constant Transition frequency Power Gain Noise figure Symbol Test conditions V(BR)CBO IC =100μA, IE=0 V(BR)CEO V(BR)EBO IC =1mA, IB=0 IE=100μA, IC=0 ICBO VCB=40V, IE=0 IEBO VEB=4V, IC=0 hFE VCE=6V, IC=1mA Cre VCE=6V, f=1MHz Cc●rbb’ VCE=6V, IE=-1mA, f=30MHz fT VCE=6V, IC=1mA Gpe VC...