SeCoS Halbleitertechnologie GmbH 2SC2668
NPN Plastic-Encapsulated Transistor
FEATURES
Small Reverse Transfer Capacitance. Low Noise Figure. CLASSIFICATION OF hFE Product-Rank 2SC2668-R 2SC2668-O Range 40~80 70~140 2SC2668-Y 100~200 TO-92S REF. A B C D E F G H J K L Millimeter Min. Max. 3.90 4.10 3.05 3.25 1.42 1.62 15.1 15.5 2.97 3.27 0.66 0.86 2.44 2.64 1.27 REF. 0.36 0.48 0.36 0.51 45° Collector 2 3 Base 1 EmitterABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 40 30 4 20 200 150, -55~150 Unit V V V mA mW °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=100µA, IC=0 Coll...