Semtech Corporation 2SC2668
NPN Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta=25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 40 30 4 20 4 100 125 -55 to +125 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 2SC2668 Characteristics at Tamb=25 OC DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y Symbol hFE hFE hFE Min. 40 70 100 Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=4V Reverse Transfer Capacitance at VCE=6V, f=1MHz Transition Frequency at VCE=6V, IC=1mA Collector Base Time Constant at VCE=6V, IE=-1mA,f=30MHz Noise Figure at VCC=6V, f=100MHz, IE=-1mA Power Gain at VCC=6V, f=100MHz, IE=-1mA ICBO IEBO Cre fT CC.rbb’ NF Gpe - G S P FORM A IS AVAILABLE Typ. 0.70 550 2.5 18 Max. 80 140 200 0.5 0.5 30 5.0 - Unit µA µA pF MHz ps dB dB SEMTECH...