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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3113
2SC3113
For Audio Amplifier and Switching Applications
Unit: mm
· High DC current gain: hFE = 600~3600 · High breakdown voltage: VCEO = 50 V · High collector current: IC = 150 mA (max) · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
50 50 5 150 30 200 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.
2SC3113 Datasheet
