2SC3113
TOSHIBA Transistor Silicon NPN Epitaxial Type
For Audio Amplifier and Switching Applications
Unit: mm
- High DC current gain: h FE = 600~3600
- High breakdown voltage: VCEO = 50 V
- High collector current: IC = 150 m A (max)
- Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
50 50 5 150 30 200 125 -55~125
Unit
V V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Transition frequency Collector output capacitance
Noise figure
ICBO IEBO
VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 h FE (Note)
VCE = 6 V, IC = 2 m A
VCE (sat) IC = 100 m...
