2SC3112
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
For Audio Amplifier and Switching Applications
- -
- High DC current gain: h FE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 m A (max) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 400 125
- 55~125 Unit V V V m A m A m W °C °C
JEDEC
TO-92
JEITA SC-43 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-5F1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.21 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings....
