2SC3302 - Silicon NPN Transistor

Toshiba

Key Features

. NF=1.5dB, 1 S21el 2=16.5dB (f=500MHz) . NF=1.7dB, IS 2 lel 2 =HdB (f=1000MHz) 2SC3302 Unit in mm.

2SC3302 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3302
Manufacturer	Toshiba
File Size	117.66 KB
Description	Silicon NPN Transistor
Datasheet	2SC3302 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . NF=1.5dB, 1 S21el 2=16.5dB (f=500MHz) . NF=1.7dB, IS 2 lel 2 =HdB (f=1000MHz) 2SC3302 Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 17 Collector-Emitter Voltage VCEO 12 4.2 MAX. Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation Junction Temperature VEBO IB IC PC 30 mA 1. BASE 2. EMITTER 70 mA 3. COLLECTOR 4. EMITTER 200 mW JEDEC 125 Storage Temperature Range L stg -55-125 MICROWAVE CHARACTERISTICS (Ta=25°C) Marking : ME Weight : 0.