The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3307
2SC3307
High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications
Industrial Applications Unit: mm
• Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max) (IC = 5 A)
• High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
900 800
7 10 15 3
150
150 −55 to 150
V V V
A
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.
2SC3307 Datasheet
