2SC3307
TOSHIBA Transistor Silicon NPN Triple Diffused Type
High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications
Industrial Applications Unit: mm
- Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max) (IC = 5 A)
- High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
Tj Tstg
900 800
7 10 15 3
- 55 to 150
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability...
