The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4793
Power Amplifier Applications Driver Stage Amplifier Applications
2SC4793
Unit: mm
• High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1837
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC IB
PC
230 V 230 V
5V 1A 0.1 A 2.0
W 20
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.
2SC4793 Datasheet
