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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5550
High-Speed Switching Application for Inverter Lighting System
2SC5550
Unit: mm
• Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA)
• High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A) • High breakdown voltage: VCEO = 400 V
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
400 400
7 1 2 0.5 1.5 10 150 −55 to 150
Unit V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.
2SC5550 Datasheet
