2SC5692
TOSHIBA Transistor Silicon NPN Epitaxial Type
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
Unit: mm
- High DC current gain: h FE = 400 to 1000 (IC = 0.3 A)
- Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
- High-speed switching: tf = 120 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
DC t = 10 s
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
250 m A
625 m W
(Note...
