• Part: 2SC5695
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 173.71 KB
Download 2SC5695 Datasheet PDF
Toshiba
2SC5695
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for High Resolution Display, Color TV - - - High voltage: VCBO = 1500 V Low saturation voltage: VCE (sat) = 3 V (max) High speed: tf (2) = 0.1 µs (typ.) Unit: mm .. Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 1500 700 5 22 44 11 200 150 -55~150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V(BR) CEO h FE (1) DC current gain h FE (2) h FE (3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Storage time Switching time...